Finding the Missing Memristor - R. Stanley Williams

We may actually see them both happening at once; one of the things R. Stanley Williams talks about in his excellent memristor talk is a method they developed for stacking hundreds of chips on top of a processor, which he says may end up providing just as much benefit as the memristor itself. The possibilities that could be opened up by having a terabyte or more of extremely fast non volatile storage attached by a bus as large as you care to make it directly on top of a CPU are mind boggling. Then when you consider that you can use them as FPGAs for computation instead and dynamically reconfigure them... wow. Memristors are only a year or two away from commercial availability, though it will probably be a while after that until they live up to the hype. We live in exciting times. The talk: [this video]

Interestingly, this is exactly what the chief of HP labs said in this video [1]: That lots of papers noted the effect and talked about anomalies, but no-one made the connection to the memristors before them. He also says that the effect is only really noticeable at nano scales (because it needs incredibly high electric fields). EDIT: on second thought, that's not the case, because the HP memristor is not a memristor in the sense of the of the original paper describing it - it has nothing to do with the magnetic flux. It can only be described with the same set of equations, so, it behaves like a memristor, but is not "actually" a memristor that completes the set [2]. That is, if I understood the video correctly (but I think I did, as the speaker himself talked about a "trick" in the beginning of the video). [1] [this video] [2] [link]

memristors, like core memory, are destructively read but are they really, with HP implementation - which is not a "real" memristor? In the video presentation [1] they show that they change the state of the memristor using very short "high" voltage impulses, and then measure its resistance using lower voltages that do not make the oxygen vacancies migrate - and thus do not change the state, if I understood that correctly. If they can use these low voltages (and low currents) to effectively read the state without altering it, they get incredibly simplified management of the memory, and incredibly low power read operations, which would justify their assertion that their memristors can be packed in 3d without thermal problems. [1] [this video]